A New Class of Power Si-SiC Hybrid Devices with Very Low Switching Energy Loss

Coordinated by: Gheorghe Brezeanu

Other department members involved in this project: Cornel Andronache, Nicoleta Brănişteanu, Florin Drăghici, Florin Mitu, Gheorghe Pristavu

Description:

The PED-WELL project proposes a new concept for significantly reducing time and energy losses in power devices switching processes. Procedures developed during the project are applicable to a wide range of power bipolar devices (for example IGBTs) for which the current turn-off phase depends entirely on the extraction of the minority carriers injected in the drift region. A new Si-SiC hybrid, high-efficiency device architecture will be implemented. Concretely, a Si IGBT structure with access to its drift region, coupled to an ensemble, comprising the forced charge extraction module and a SiC freewheeling Schottky diode will be designed, fabricated and laboratory validated. The three-terminal IGBT topology will be kept. In addition, a dedicated test platform will be developed, in order to measure switching times and energy losses.

Project objectives:

• IGBT structure optimization to allow access to the drift region.
• Selecting a suitable minority carrier forced extraction device.
• Development of SiC Schottky freewheeling diodes, optimized for power-switching operation.
• Implementation of a dedicated test platform for measuring switching times and evaluating power consumption.
• Development and experimental laboratory validation (switch-mode measurements) of Si-SiC hybrid power device.

The original contributions of the project will be patented, published in ISI-indexed journals, and presented at scientific conferences. The experience and scientific expertise of the consortium partners provide strong guarantees for the successful achievement of the project objectives.